This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low r DS(on) /Qg FOM silicon.
Max r DS(on) = 19.5 m Ω at V GS = 10 V, I D = 7 A
Max r DS(on) = 30 m Ω at V GS = 4.5 V, I D = 5.7 A
Ideal for flexible layout in primary side of bridge topology