These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’ s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required.
Max r DS(on) = 23 m Ω at V GS = 10 V, I D = 7.0 A
Max r DS(on) = 33 m Ω at V GS = 4.5 V, I D = 5.5 A
Fast switching speed Low gate charge High performance trench technology for extremely low r DS(on)