This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. T he MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Max r DS(on) = 12.5 m Ω at V GS = -4.5 V, I D = -12 A
Max r DS(on) = 18 m Ω at V GS = -2.5 V, I D = -10 A
Max r DS(on) = 28 m Ω at V GS = -1.8 V, I D = -8 A
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm