This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Shielded Gate MOSFET Technology
Max r DS(on) = 104 m Ω at V GS = 10 V, I D = 4.2 A
Max r DS(on) = 156 m Ω at V GS = 4.5 V, I D = 3.4 A
HBM ESD protection level > 6 kV typical (Note 4)
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used surface mount package