This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized for r DS(on) , switching performance and ruggedness.
Shielded Gate MOSFET Technology
Max r DS(on) = 350 m Ω at V GS = 10 V, I D = 1.2 A
Max r DS(on) = 575 m Ω at V GS = 6 V, I D = 0.9 A
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used surface mount package