These N-Channel 100V specified MOSFETs are produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1.0 A, 100 V.
R DS(ON) = 500 m Ω @ V GS = 10 V
R DS(ON) = 550 m Ω @ V GS = 6.0 V
Low gate charge (3.7nC typical)
Fast switching speed.
High performance trench technology for extremely low R DS(ON) .
Super SOT TM -6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick).