MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.
MB85RS64V adopts the Serial Peripheral Interface (SPI).
The MB85RS64V is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS64V can be used for 10^12 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS64V does not take long time to write data like Flash memories or E2PROM, and MB85RS64V takes no wait time.
Bit configuration: 8, 192 words × 8 bits
Serial Peripheral Interface: SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency: 20 MHz (Max)
High endurance: 10^12 times / byte
Data retention: 10 years (+ 85 °C), 95 years (+ 55 °C), over 200 years (+ 35 °C)
Operating power supply voltage: 3.0 V to 5.5 V
Low power consumption: Operating power supply current 1.5 mA (Typ@20 MHz) Standby current 10 μA (Typ)
Operation ambient temperature range: − 40 °C to + 85 °C