The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 10^12 Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other non-volatile memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
Bit configuration : 2, 048 words × 8 bits
Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA)
Operating frequency : 1 MHz (Max)
Read/Write endurance : 10 12 times/byte
Data retention : 10 years (+ 85 ° C), 95 years (+ 55 ° C), over 200 years (+ 35 ° C)
Operating power supply voltage : 2.7 V to 3.6 V
Low power consumption : Operating power supply current 70 μ A (Typ @1 MHz) Standby current 0.1 μ A (Typ)
Operation ambient temperature range : − 40 ° C to + 85 ° C