The EL814 device consists of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. The device is packaged in a 4-pin DIP package and available in side-lead spacing and SMD option.
AC input response
Current transfer ratio (CTR: Min. 20% at IF =±1mA ,VCE =5V)
High isolation voltage between input and output (Viso=5000 V rms )