SiC - Silicon Carbide Schottky Diodes

Silicon Carbide schottky diodes have the advantage of silicon carbide compound’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage. They have the lowest reverse recovery time (trr) compared to the various types of fast recovery, ultrafast recovery and super-fast recovery diodes and they also have the lowest forward voltage drop (VF). Silicon carbide is a compound semiconductor with high level power characteristics than silicon, including a bandgap approximately three times greater, a dielectric breakdown field 10 times higher and a thermal coefficient three times larger.