IGBT

Four layered three terminal power semiconductor devices which are actually a combination of power MOS transistor and a thyristor providing the device the advantages of both i.e. high efficiency and fast switching. They are designed to be used with high voltages as they can be prepared with significantly lower values of RDS(on) compared to a MOSFET of same die size.

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IRG4PSC71UDPBF

IRG4PSC71UDPBF

Infineon

Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA

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€8,99
25
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IRG4BC20KDSTRLP

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Infineon

Trans IGBT Chip N-CH 600V 16A 3-Pin(2+Tab) D2PAK T/R

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IRG4BC30UPBF

IRG4BC30UPBF

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Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220AB

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IRG4BC40KPBF

IRG4BC40KPBF

Infineon

Trans IGBT Chip N-CH 600V 42A 3-Pin(3+Tab) TO-220AB

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