IGBT

Four layered three terminal power semiconductor devices which are actually a combination of power MOS transistor and a thyristor providing the device the advantages of both i.e. high efficiency and fast switching. They are designed to be used with high voltages as they can be prepared with significantly lower values of RDS(on) compared to a MOSFET of same die size.

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IRGIB15B60KD1P

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IRG4BC20KDPBF

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IRG4BC30SPBF

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IRG4IBC30KDPBF

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