The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
150°C Operating Junction Temperature
Matched Dual Die Construction (10 A per Leg or 20 A per Package)
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients