This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
High performance trench technology for extremely low rDS(on)