This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
RDS(ON) = 5.9mΩ @ VGS = 10V, ID=35A
RDS(ON) = 7.0mΩ @ VGS = 4.5V, ID=35A
High Performance Trench Technology for Extremely Low RDS(ON)