The new integrated power stages from Infineon combine the most advanced low voltage MOSFET technology with our latest driver design. These technologies, integrated into our proven multichip PQFN package offer customers a best-in-class efficiency device for managing processor power. This integration of driver technology, FET technology and package technology also demonstrates the powerful combination of Infineon and International Rectifier’s capabilities. All integrated power stages in this new portfolio are available in industry standard 5x6 footprints and various current ratings, covering high-end and price performance customer requirements.
Dual edge trim dead time leads to a significant improvement in peak efficiency. The internal MOSFET RDS(on) current sensing (via dedicated Kelvin GND connection) with integrated temperature compensation achieves superior current sense accuracy versus inductor DCR sense methods. Our new integrated power stage family also offers cycle-bycycle over current protection with programmable threshold and fault flag. Additionally, our programmable constant current limit OCSET allows the user to set a specific current limit. UVLO protection supports stable operation during system start up.
Infineon’s new generation of integrated power stages is optimized for CPU core as well as GPU and DDR memory power delivery in server, telecom and datacom applications.
Small 5 x 6 x 0.9 mm³ overmolded PQFN package, 0.45 mm pitch
Highly accurate current reporting
Programmable constant current limit OCSET
Fast switching technology for improved performance at higher frequency, better peak efficiency