SiC - Silicon Carbide Schottky Diodes

Silicon Carbide schottky diodes have the advantage of silicon carbide compound’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage. They have the lowest reverse recovery time (trr) compared to the various types of fast recovery, ultrafast recovery and super-fast recovery diodes and they also have the lowest forward voltage drop (VF). Silicon carbide is a compound semiconductor with high level power characteristics than silicon, including a bandgap approximately three times greater, a dielectric breakdown field 10 times higher and a thermal coefficient three times larger.

查看全部
添加到物料清單
添加到新的物料清單
您的物料清單
關閉
該項目將被添加到您的“精確配對”
關閉
發送連結到此頁面
Please enter a valid Email id
連結
寄件者
發送到
jsmith@baa.com
sjohnson@baa.com
新增另一個地址
新增另一個地址
新增另一個地址
主題
留言

查詢結果

查詢結果 清除所有篩選條件