The Insulated Gate Bipolar Transistor (IGBT) modules consist of many devices in parallel, and have very high current-handling capabilities in the order of hundreds of amperes and thereby control loads of hundreds of kilowatts. An IGBT combines the insulated gate technology of the MOSFET with the output performance characteristics of a conventional bipolar transistor, and the result of this hybrid combination is that the IGBT Transistor has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET.
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