IGBT

Four layered three terminal power semiconductor devices which are actually a combination of power MOS transistor and a thyristor providing the device the advantages of both i.e. high efficiency and fast switching. They are designed to be used with high voltages as they can be prepared with significantly lower values of RDS(on) compared to a MOSFET of same die size.
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IGBT - 子類別

IGBT ICs

229

暢銷產品

FF150R12KT3G
Infineon
Trans IGBT Module N-CH 1.2KV 225A 7-pin 62MM-1
價格
庫存
$183.65
50 
FF200R12KT3
Infineon
Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1
價格
庫存
$212.48163
50 
FP75R12KT3
Infineon
Trans IGBT Module N-CH 1.2KV 105A 24-pin ECONO3-3
價格
庫存
$265.65714
50