MOSFET DRVR 4A 1-OUT Lo Side Non-Inv 5-Pin SOT-23 T/R
The UCC27518A-Q1 and UCC27519A-Q1 single-channel high-speed low-side gate driver devices effectively drive MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27518A-Q1 and UCC27519A-Q1 source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.
The UCC27518A-Q1 and UCC27519A-Q1 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27518A-Q1 and UCC27519A-Q1 operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power-semiconductor devices. UCC27519A-Q1 available upon request (preview only).
The input pin threshold of the UCC27518A-Q1 and UCC27519A-Q1 is based on CMOS logic where the threshold voltage is a function of the VDD supply voltage. Typically Input High Threshold (VIN–H) is 55% VDD and Input Low Threshold (VIN–L) is 39% VDD. Wide hysteresis (16% VDD typically) between the high and low thresholds offers excellent noise immunity and allows users to introduce delays using RC circuits between the input PWM signal and the INx pin of the device.
The UCC27518A-Q1 and UCC27519A-Q1 also feature a floatable enable function on the EN pin. The EN pin can be left in a no-connect condition, which allows pin-to-pin compatibility between the UCC27518A-Q1, UCC27519A-Q1, and the TPS2828, TPS2829 respectively. The enable pin threshold is a fixed voltage threshold and does not vary based on VDD pin bias voltage. Typically Enable High Threshold (VEN-H) is 2.1 V and Enable Low Threshold (VEN-L) is 1.25 V.