HIP2100IBZT by Renesas Electronics | APACMOSFET & Power Drivers | Avnet ASIA
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信息

HIP2100IBZT

Renesas Electronics

MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N T/R

制造商料号#: HIP2100IBZT

替代型号#: HIP2100IBZT


通过RoHS认证

描述

文档

替代/替换

信息

The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

技术参数

  • Drives N-Channel MOSFET Half Bridge
  • SOIC, EPSOIC, QFN and DFN Package Options
  • SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
  • Pb-Free Product Available (RoHS Compliant)
  • Bootstrap Supply Max Voltage to 114VDC
  • On-Chip 1Ω Bootstrap Diode
  • Fast Propagation Times for Multi-MHz Circuits
  • Drives 1000pF Load with Rise and Fall Times Typ. 10ns
  • CMOS Input Thresholds for Improved Noise Immunity
  • Independent Inputs for Non-Half Bridge Topologies
  • No Start-Up Problems
  • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
  • Low Power Consumption
  • Wide Supply Range
  • Supply Undervoltage Protection
  • 3Ω Driver Output Resistance

技术特性

描述
寻找类似物料
Maximum Turn-On Delay Time
8 ns
Bridge Type
Half Bridge
Product Dimensions
5 x 4 x 1.5 mm
Output Resistance
3 Ohm
Peak Output Current
2 A
Minimum Operating Supply Voltage
9 V
Operating Temperature
-55 to 150 °C
Driver Type
High and Low Side
Max Processing Temp
260|300
Maximum Turn-Off Delay Time
8 ns
Mounting
Surface Mount
Pin Count
8
Input Logic Compatibility
CMOS
Maximum Propagation Delay Time
35 ns
Maximum Operating Supply Voltage
14 V
Supplier Package
SOIC N
Maximum Supply Current
2.5 mA
Screening Level
Industrial
Lead Finish
Matte Tin
Maximum Power Dissipation
1300 mW
MSL Level
1
Driver Configuration
Non-Inverting
Number of Drivers
2
Number of Outputs
2
High and Low Sides Dependency
Independent

ECCN / UNSPSC

描述
ECCN:
EAR99
计划交货期 B:
8542390000"
HTSN:
8542390001"
UNSPSC:
32101600
UNSPSC VERSION:
V15.1101
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