MJD5731T4G by ON Semiconductor | APACGP BJT | Avnet ASIA

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MJD5731T4G

ON Semiconductor

Trans GP BJT PNP 350V 1A 3-Pin(2+Tab) DPAK T/R

制造商料号#: MJD5731T4G

替代型号#: MJD5731T4G


legend 通过RoHS认证

描述

文档

替代/替换

信息

The High Voltage Bipolar PNPPower Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

技术参数

  • 350 V (Min)Vceo(sus)
  • 1.0 A Rated Collector Current
  • PNP Complement to the MJD47-50 Series
  • These Devices are Pb-Free and are RoHS Compliant

技术特性

描述
寻找类似物料
Lead Finish
Matte Tin
Maximum Collector Emitter Voltage
350 V
Maximum Collector Emitter Saturation Voltage
1@0.2A@1A V
Mounting
Surface Mount
Pin Count
3
Maximum Power Dissipation
1560 mW
Type
PNP
Operating Temperature
-55 to 150 °C
Product Dimensions
6.73 x 6.22 x 2.38 mm
Maximum DC Collector Current
1 A
Minimum DC Current Gain
30@0.3A@10V|10@1A@10V
Maximum Emitter Base Voltage
5 V
Max Processing Temp
260
Supplier Package
DPAK
MSL Level
1

ECCN / UNSPSC

描述
ECCN:
EAR99
计划交货期 B:
85412100005.1
HTSN:
85412100005.1
UNSPSC:
32111611
UNSPSC VERSION:
V15.1101
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