MJ11015G by ON Semiconductor | APACDarlington BJT | Avnet ASIA

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信息

MJ11015G

ON Semiconductor

Trans Darlington PNP 120V 30A 3-Pin(2+Tab) TO-204 Tray

制造商料号#: MJ11015G

替代型号#: MJ11015G


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描述

文档

替代/替换

信息

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications.

技术参数

  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C

技术特性

描述
寻找类似物料
Maximum Collector Emitter Voltage
120 V
Lead Finish
Matte Tin
Maximum Collector Emitter Saturation Voltage
3@200mA@20A|4@300mA@30A V
Type
PNP
Max Processing Temp
275
Configuration
Single
Minimum DC Current Gain
200@30A@5V|1000@20A@5V
Maximum Collector Base Voltage
120 V
Pin Count
3
Mounting
Through Hole
Maximum Emitter Base Voltage
5 V
Product Dimensions
39.37 x 26.67 x 8.51 mm
Peak DC Collector Current
30 A
Maximum Base Emitter Saturation Voltage
3.5@200mA@20A|5@300mA@30A V
Supplier Package
TO-204

ECCN / UNSPSC

描述
ECCN:
EAR99
计划交货期 B:
8541290080"
HTSN:
8541290095"
UNSPSC:
32111607
UNSPSC VERSION:
V15.1101
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