This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
2.9 A, 30 V
R DS(ON) = 123 m : @ V GS = 4.5 V
R DS(ON) = 140 m : @ V GS = 3.0 V
R DS(ON) = 163 m : @ V GS = 2.5 V
Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides