This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS ( ON) and fast switching speed.
21 A, 20 V
R DS(ON) = 3 2 m Ω @ V GS = 4.5 V
R DS(ON) = 47 m Ω @ V GS = 2.5 V
Low gate charge (6.5 nC typical)
High performance trench technology for extremely low R DS(ON)