The 4N38M is phototransistor-type optically coupled optoisolator. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Safety and Regulatory Approvals:
UL1577, 4,170 VACRn,s for 1 Minute
DIN-ENIlEC60747-5-5, 850 V Peak working Insulation Voltage