IPB009N03L G by Infineon | APACMOSFETs | Avnet ASIA
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信息

IPB009N03L G

Infineon

Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R

制造商料号#: IPB009N03L G

替代型号#: IPB009N03L G


描述

文档

替代/替换

信息

With the new OptiMOS3 30V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and HOT-SWAP application.

技术参数

  • Lowest on-state resistance
  • High DC and pulsed current capability
  • Easy to design in
  • 技术特性

    描述
    寻找类似物料
    Maximum Gate Source Voltage
    ±20 V
    Product Dimensions
    10.31(Max) x 9.45(Max) x 4.57(Max)
    Typical Rise Time
    14 ns
    Max Processing Temp
    260
    Typical Turn-On Delay Time
    26 ns
    Operating Temperature
    -55 to 175 °C
    Channel Mode
    Enhancement
    Mounting
    Surface Mount
    Pin Count
    7
    Maximum Drain Source Voltage
    30 V
    Lead Finish
    Tin
    Maximum Continuous Drain Current
    180 A
    Typical Turn-Off Delay Time
    103 ns
    Supplier Package
    TO-263
    Channel Type
    N
    RDS-on
    0.95@10V mOhm
    MSL Level
    1
    Typical Fall Time
    22 ns

    ECCN / UNSPSC

    描述
    ECCN:
    EAR99
    计划交货期 B:
    85412990008.1
    HTSN:
    85412990008.1

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