AT-32063-TR1G | APAC | Avnet ASIA
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信息

AT-32063-TR1G

Broadcom

Trans GP BJT NPN 5.5V 0.032A 6-Pin SOT-363 T/R

制造商料号#: AT-32063-TR1G

替代型号#: AT-32063-TR1G


legend RoHS Non-Compliant

描述

文档

替代/替换

信息

TheAT-32063containstwohighperformanceNPNbipolartransistors in a single SOT-363 package. The devices areunconnected, allowing flexibility in design. The pin-outis convenient for cascode amplifier designs. The SOT-363package is an industry standard plastic surface mountpackage.The 3.2 micron emitter-to-emitter pitch and reducedparasitic design of the transistor yields extremely highperformance products that can perform a multiplicityof tasks. The 20 emitter finger interdigitated geometryyields a transistor that is easy to match to and extremelyfast, with moderate power, low noise resistance, and lowoperating currents.Optimized performance at 2.7 V makes this device idealfor use in 900 MHz, 1.8GHz, and 2.4GHz battery operatedsystems as an LNA, gain stage, buffer, oscillator, or activemixer. Typical amplifier designs at 900 MHz yield 1.3 dBnoise figures with 12 dB or more associated gain at a 2.7V, 5 mA bias, with noise performance being relativelyinsensitive to input match. High gain capability at 1 V, 1mA makes this device a good fit for 900 MHz pager applications.Voltage breakdowns are high enough for useat 5 volts.The AT-3 series bipolar transistors are fabricated usingan optimized version of Avago’s 10 GHz ft , 30 GHz fmaxSelf-Aligned-Transistor (SAT) process. The die are nitridepassivated forsurface protection. Excellent device uniformity,performance and reliability are produced by the useof ion-implantation,self-alignment techniques, and goldmetallization in the fabrication of these devices.

技术参数

  • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
  • 900 MHz Performance: 1.1 dB NF, 14.5 dB GA
  • Characterized for End-of-Life Battery Use (2.7 V)
  • SOT-363 (SC-70) Plastic Package
  • Tape-and-Reel Packaging Option Available
  • Lead-free

技术特性

描述
寻找类似物料
Lead Finish
Matte Tin
Mounting
Surface Mount
Maximum DC Collector Current
0.032 A
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
50@5mA@2.7V
Maximum Collector Base Voltage
11 V
Maximum Emitter Base Voltage
1.5 V
Max Processing Temp
260
Operating Temperature
-65 to 150 °C
Maximum Collector Emitter Voltage
5.5 V
Type
NPN

ECCN / UNSPSC

描述
ECCN:
EAR99
计划交货期 B:
8541210080
HTSN:
8541210075
UNSPSC:
32111611
UNSPSC VERSION:
V15.1101
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