闪存

Flash memory is a type of non-volatile memory (meaning that its data is retained even after power is turned off) that can be erased electrically and reprogrammed. Flash memory is technically a type of EEPROM but costs much less than non-flash EEPROMs. There are two types of Flash memory available based on how the connections are made internally and how internal memory cell operates. NOR type and NAND type. In single level cell (SLC) devices, each cell stores one bit of data. Multi-level cell (MLC) devices, including Triple level cell (TLC) devices, store more than one bit per cell. NAND flash memory can be programmed and erased in blocks (or pages) and NOR flash can be programmed and erased in individual bytes where other non-volatile memories needs entire chip to be erased at one time.
闪存 Products under 存储器

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