IGBTs

A four layered three terminal power semiconductor device which is actually a combination of power MOS transistor and a thyristor providing the device the advantages of both i.e. high efficiency and fast switching. It is designed to use with high voltages as it can be prepared with significantly lower values of RDS(on) than compared to a MOSFET of same die size.

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畅销产品

FS100R12KT3

FS100R12KT3

Infineon

Trans IGBT Module N-CH 1.2KV 140A 35-pin ECONO3-4

价格
库存
$191.03
50
购买
FS150R12KT4

FS150R12KT4

Infineon

Trans IGBT Module N-CH 1.2KV 150A 35-Pin ECONO 3

价格
库存
$227.26
10
购买