SiC - 碳化硅肖特基二极管
A Silicon Carbide schottky diode have the advantage of silicon carbide compound’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage. It has the lowest reverse recovery time (trr) compared to the various types of fast recovery, ultrafast recovery and super-fast recovery diodes and they also have the lowest forward voltage drop (VF). Silicon carbide is a compound semiconductor with high level power characteristics than silicon, including a bandgap approximately three times greater, a dielectric breakdown field 10 times higher and a thermal coefficient three times larger.
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