UCC27210DRMR by Texas Instruments | MOSFET and Power Drivers | Avnet ASIA

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UCC27210DRMR

Texas Instruments

MOSFET DRVR 4.5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8-Pin VSON EP T/R

Manufacturer Part #: UCC27210DRMR

Alternate Part #: UCC27210DRMR


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The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have been reduced to 0.9 Ω, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20-V.

The switching node (HS pin) of the UCC2721x can handle –18 V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turnon and turnoff of each other.

An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.

Both devices are offered in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8 (DRM) and SON-10 (DPR) packages.

Key Features

  • Drives Two N-Channel MOSFETs in High-Side
    and Low-Side Configuration With Independent
    Inputs
  • Maximum Boot Voltage 120-V DC
  • 4-A Sink, 4-A Source Output Currents
  • 0.9-Ω Pullup and Pulldown Resistance
  • Input Pins Can Tolerate –10 V to 20 V and Are
    Independent of Supply Voltage Range
  • TTL or Pseudo-CMOS Compatible Input Versions
  • 8-V to 17-V VDD Operating Range, (20-V Absolute
    Maximum)
  • 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF
    Load
  • Fast Propagation Delay Times (18 ns Typical)
  • 2-ns Delay Matching
  • Symmetrical Undervoltage Lockout for High-Side
    and Low-Side Driver
  • All Industry Standard Packages Available (SOIC-8,
    PowerPAD™ SOIC-8, 4-mm × 4-mm SON-8
    and 4-mm × 4-mm SON-10)
  • Specified from –40 to 140 °C
  • Technical Attributes

    Description
    Value
    Find similar Parts
    Bridge Type
    Full Bridge|Half Bridge
    Typical Operating Supply Voltage
    12 V
    Minimum Operating Supply Voltage
    8 V
    Operating Temperature
    -40 to 140 °C
    Mounting
    Surface Mount
    Lead Finish
    Gold
    Max Processing Temp
    260
    Supplier Package
    VSON EP
    Pin Count
    8
    Maximum Fall Time
    400 ns
    Input Logic Compatibility
    CMOS
    Maximum Operating Supply Voltage
    17 V
    Product Dimensions
    4 x 4 x 0.9 mm
    Peak Output Current
    4.5 A
    MSL Level
    1
    Driver Type
    High and Low Side
    Driver Configuration
    Non-Inverting
    Number of Drivers
    2
    Number of Outputs
    2
    High and Low Sides Dependency
    Independent
    Maximum Propagation Delay Time
    46 ns
    Maximum Supply Current
    4.3 mA
    Maximum Rise Time
    600 ns

    ECCN / UNSPSC

    Description
    Value
    ECCN:
    EAR99
    SCHEDULE B:
    8542390000
    HTSN:
    8542390000
    UNSPSC:
    32101600
    UNSPSC VERSION:
    V15.1101

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