These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
Intrinsic fast-recovery body diode
Worldwide best RDS(on)*area amongst the fast recovery diode devices