MJD112RLG by ON Semiconductor | Darlington BJT | Avnet ASIA

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MJD112RLG

ON Semiconductor

Trans Darlington NPN 100V 2A 3-Pin(2+Tab) DPAK T/R

Manufacturer Part #: MJD112RLG

Alternate Part #: MJD112RLG


legend RoHS Compliant

Descriptions

Documents

Subs/Alternatives

Information

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.

Key Features

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Surface Mount Replacements for TIP110-TIP117 Series
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
  • Complementary Pairs Simplifies Designs
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Packages are Available

Technical Attributes

Description
Value
Find similar Parts
Maximum Collector Cut-off Current
20 uA
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Max Processing Temp
260
Configuration
Single
Supplier Package
DPAK
Minimum DC Current Gain
500@0.5A@3V|1000@2A@3V|200@4A@3V
Lead Finish
Matte Tin
Maximum Base Emitter Saturation Voltage
4@40mA@4A V
MSL Level
1
Mounting
Surface Mount
Peak DC Collector Current
2 A
Maximum Collector Base Voltage
100 V
Type
NPN
Pin Count
3
Maximum Collector Emitter Saturation Voltage
2@8mA@2A|3@40mA@4A V
Product Dimensions
6.73 x 6.22 x 2.38 mm

ECCN / UNSPSC

Description
Value
ECCN:
EAR99
SCHEDULE B:
8541290080"
HTSN:
8541290095"
UNSPSC:
32111607
UNSPSC VERSION:
V15.1101
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