These P-Channel 2.5V specified MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
RDS(on) = 0.075Ω @ VGS = -4.5V
RDS(on) = 0.105Ω @ VGS = -2.5V
Low gate charge ( 7nC typical)
Fast switching speed
High performance trench technology for extremely low --RDS(on)