Manufacturer:
Micron
MT53E2G32D4DE-046 WT:C
DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, TFBGA, 200 Pins
Avnet Manufacturer Part #:
MT53E2G32D4DE-046 WT:C
RoHS 6 Compliant
MT53E2G32D4DE-046 WT:C is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
Key Features
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16,32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.5GB/s per die x16 channel, on-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
- 8GB (64Gb) total density, 4266Mb/s data rate per pin
- 200-ball TFBGA package
- Operating temperature rating range from -25°C to +85°C
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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No. of Pins | 200 |
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Memory Density | 64 Gbit |
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Supply Voltage Nom | 1.1 V |
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Clock Frequency Max | 2.133 GHz |
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Operating Temperature Max | 85 °C |
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Operating Temperature Min | -25 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |