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Diode RF Detector Schottky 4V 2-Pin Case 07
Manufacturer Part #: HSCH-5310
Alternate Part #: HSCH-5310
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.