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DRAM Chip DDR3 SDRAM 1G-Bit 64M x 16 1.5V 96-Pin F-BGA
Manufacturer Part #: AS4C64M16D3-12BCN
Alternate Part #: AS4C64M16D3-12BCN
The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.