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MMSF3P02HDR2G

ON Semiconductor

Trans MOSFET P-CH 20V 5.6A 8-Pin SOIC N T/R

Manufacturer Part #: MMSF3P02HDR2G

Alternate Part #: MMSF3P02HDR2G


legend RoHS Compliant

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Information

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Key Features

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate DriveCan Be Driven by Logic ICs
  • Miniature SO-8 Surface Mount PackageSaves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Mounting Information for SO-8 Package Provided
  • Pb-Free Package is Available

Technical Attributes

Description
Value
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Lead Finish
Matte Tin
Mounting
Surface Mount
Channel Mode
Enhancement
Typical Rise Time
135|40 ns
Maximum Continuous Drain Current
5.6 A
Channel Type
P
Operating Temperature
-55 to 150 °C
Max Processing Temp
260
RDS-on
75@10V mOhm
Maximum Gate Source Voltage
±20 V
Typical Fall Time
84|97 ns
Typical Turn-On Delay Time
25|16 ns
Typical Turn-Off Delay Time
54|110 ns
Maximum Drain Source Voltage
20 V

ECCN / UNSPSC

Description
Value
ECCN:
EAR99
UNSPSC:
32111603
UNSPSC VERSION:
V15.1101
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