IGBT

IBGTs are four layered three terminal power semiconductor devices which are actually a combination of power MOS transistor and a thyristor. This combination provides the device the advantages of both. high efficiency and fast switching. They are designed to be used with high voltages, as they can be prepared with significantly lower values of RDS(on) compared to a MOSFET of the same die size.
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IGBT ICs

239

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FP35R12KT4
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