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Gallium Nitride FETs (GaN)

A wide bandgap semiconductor device with advantages of higher breakdown voltage, improved switching performance, lower on resistance and higher thermal conductivity compated to the standard silicon based device.
Gallium Nitride FETs (GaN)
PRODUCT PRICE AvailabilityRefresh Stock Manufacturer Information FOR USE WITH TYPE
Avnet Manufacturer Part #: GAN3R2-100CBEAZ
Min:1500  Mult:1500  
  • In Stock :1500
  • Additional inventory
    Factory Lead Time: 28
Nexperia
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